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晶圓，是純硅（99.9999%）制成的一片片薄薄的圓形硅芯片。
因其形狀為圓形，故稱為晶圓。
立承德（NEXTECK）提供的晶圓分成半導(dǎo)體用硅晶圓材料和太陽能電池用硅晶圓材料兩種。
半導(dǎo)體用的硅芯片主要集中在4~6 inch，具體的規(guī)格如下：
| Items 產(chǎn)品 | General Specification of Semiconductor Wafer | ||||||||
| 4 inch | 5 inch | 6 inch | |||||||
| Resistivity(Ω/cm) 電阻率 | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
| N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
| Diameter tolerance(mm) 直徑公差 | ±0.2 | ±0.2 | ±0.2 | ||||||
| Orientation 晶向 | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
| Orientation tolerance 晶向公差 | ±0.15° | ±0.15° | ±0.15° | ||||||
| Edge Profile | T/R | T/R | T/R | ||||||
| Edge Condition邊緣條件 | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
| Thickness(μm)厚度 | 300-650 | 400-650 | 550-750 | ||||||
| Thickness tolerance(μm)厚度公差 | ±15 | ±15 | ±15 | ||||||
| Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
| Bow(μm)翹曲度 | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
| Warp(μm)彎曲度 | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
| Options 選項(xiàng) | Laser marking, Poly-back, SiO2 seal, Back side damage | ||||||||
提供的太陽能級(jí)別的晶硅產(chǎn)品可分為單晶硅和多晶硅兩種，我們可根據(jù)客戶的需求有不同的規(guī)格。一般的規(guī)格如下：
| 單晶硅晶圓規(guī)格 | 多晶硅晶圓規(guī)格 | |
| Category 類型 | 156*156mm（Mono wafer單晶硅) | 156*156mm（Multi wafer多晶硅) |
| Growing method | CZ | |
| Type 種類 | P | P |
| Dopant摻雜物 | Boron硼 | Boron硼 |
| Crystal Orientation晶向 | <100>+/-3 deg | |
| Carbon content含碳量(atom/cm3) | <5*1016 | <5*1017 |
| Oxygen content含氧量(atom/cm3) | <1.1*1018 | <1*1018 |
| Etch Pit Defects(/cm3) | <=3000 | |
| Resistivity電阻率 | 0.5～3/3～6 | 0.5～3 |
| Minority Carrier Lifetime少數(shù)載子生命周期(microsecond 微秒(μs) ) | >10 | >=2 |
| Dimension(mm)體積 | 156+/-0.5 | 156+/-0.5 |
| Thickness(μm)厚度 | 200+/-20 | 200+/-20 |
| TTV 平整度(μm) | <=30 | <=30 |
| Bow/Warp 翹曲度/彎曲度(μm) | <100 | <50 / <100 |
| Surface Saw Damage Depth表面粗糙度(μm) | <=15 | <=20 |
| Edge(Chip)邊緣（芯片） | Depth≤0.5mm | Depth≤0.5mm |
| Vertical≤1.0mm | Vertical≤3.0mm | |
| Defect≤2 | Defect≤2 |
立承德（ NEXTECK ）的各項(xiàng)產(chǎn)品都獲得長年的實(shí)積和信賴。用于半導(dǎo)體及電子零件的各種牌號(hào)非常齊全，對(duì)應(yīng)各式各樣的成形方法，具有良好的成形性與尺寸精確度。